r07ds0055ej0300 rev.3.00 page 1 of 7 nov 24, 2010 preliminary datasheet rjh60f5dpk silicon n channel igbt high speed power switching features ? low collector to emitter saturation voltage v ce(sat) = 1.37 v typ. (i c = 40 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching t r = 85 ns typ. (at i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 5 ? , ta = 25c, inductive load) outline 1. gate 2. collector 3. emitter 4. collector (flange) c g e renesas package code: prss0004ze-a (package name: to-3p) 1 2 3 4 absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25 c i c 80 a collector current tc = 100 c i c 40 a collector peak current ic(peak) note1 160 a collector to emitter diode forward peak current i df (peak) note2 100 a collector dissipation p c 260.4 w junction to case thermal impedance (igbt) ? j-c 0.48 c/w junction to case thermal impedance (diode) ? j-c 2.0 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pulse width limited by safe operating area. 2. pw ? 5 ? s, duty cycle ? 1% r07ds0055ej0300 rev.3.00 nov 24, 2010
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 2 of 7 nov 24, 2010 electrical characteristics (tj = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 100 ? a v ce = 600v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4 ? 8 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.37 1.8 v i c = 40 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 1.7 ? v i c = 80 a, v ge = 15 v note3 input capacitance cies ? 2780 ? pf output capacitance coes ? 122 ? pf reverse transfer capacitance cres ? 43 ? pf v ce = 25 v v ge = 0 v f = 1 mhz t d(on) ? 53 ? ns t r ? 145 ? ns t d(off) ? 105 ? ns switching time t f ? 85 ? ns i c = 30 a, v ce = 400 v, v ge = 15 v rg = 5 ? note3 , inductive load v ecf1 ? 1.6 2.1 v i f = 20 a note3 c-e diode forward voltage v ecf2 ? 1.8 ? v i f = 40 a note3 c-e diode reverse recovery time t rr ? 140 ? ns i f = 20 a di f /dt = 100 a/ ? s notes: 3. pulse test
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 3 of 7 nov 24, 2010 main characteristics 0 6 4 2 8 10 collector to emitter saturation voltage vs. junction temparature (typical) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ? 25 0 25 75 125 50 100 150 collector to emitter saturation voltage v ce(sat) (v) v ge = 15 v pulse test junction temparature tj ( c) typical output characteristics 160 120 80 40 12345 collector current i c (a) 0 0 collector to emitter voltage v ce (v) collector current i c (a) collector to emitter voltage v ce (v) 160 120 80 40 0 pulse test ta = 25 c pulse test ta = 25 c 9 v v ge = 8 v 8.5 v 9.5 v 10.5 v 15 v 13 v 10 v 11 v 1.0 2.2 1.8 1.4 2.6 3.0 6 8 10 12 14 16 2018 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) 40 a 20 a i c = 20 a 40 a 80 a i c = 80 a ta = 25 c pulse test gate to emitter voltage v ge (v) typical transfer characteristics collector current i c (a) 246810 12 v ce = 10 v pulse test gate to emitter voltage v ge (v) 25c ?25c tc = 75 c gate to emitter cutoff voltage vs. junction temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test junction temparature tj ( c) 1 ma i c = 10 ma maximum safe operation area 1000 100 1 10 0.1 1 100 10 1000 tc = 25c single pulse 100 s pw = 10 s
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 4 of 7 nov 24, 2010 capacitance c (pf) 10 100 1000 10000 0 100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input character istics (t ypica l) t ypical capacitance vs. collector to emitter vo ltage 800 600 400 200 0 0 16 12 8 4 0 20 4 06080 100 i c = 40 a ta = 25 c v ge v ce v cc = 600 v 300 v v ge = 0 v f = 1 mhz ta = 25 c collector to emitter vo ltage v ce (v) collector to emitter vo ltage v ce (v) gate to emitter vo ltage v ge (v) c-e diode forward vo ltage v cef (v) forward current vs. forward vo ltage (t ypical) forward current i f (a) 0 20 40 60 80 100 01234 5 v ge = 0 v t a = 25 c pulse test v cc = 300 v 600 v
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 5 of 7 nov 24, 2010 800 400 1600 1200 0 0 120 80 40 240 200 160 0 1 10 200100 collector current i c (a) (inductive load) 05 0 25 150 75 125100 05 0 25 150 75 125100 sw itching characteristics (typical) (3) 100 1000 10 t d(off) t d(on) t r t f junction temperature tj (c) (inductive load) junction temperature tj (c) (inductive load) sw itching characteristics (typical) (4) eoff eon swithing energy losses e ( j) sw itching times t (ns) 1 10 200100 10 1000 100 100000 10000 swithing energy losses e (j) collector current i c (a) (inductive load) eoff eon sw itching characteristics (typical) (1) s w itching characteristics (typical) (2) sw itching times t (ns) v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c t r includes the diode recovery v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 t r includes the diode recovery t d(off) t d(on) t f t r
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 6 of 7 nov 24, 2010 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.48 c/w, tc = 25 c tc = 25c 0.01 1 0.1 10 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 0.02 tc = 25c 0.01 1 shot pulse 0.05 0.2 0.1 0.5 d = 1 switching time test circuit 0.02 0.01 1 shot pulse waveform diode clamp d.u.t rg l v cc t d(off) t off t on t d(on) t f t r t tail 90% 90% 90% 10% 10% 10% 10% 1% v ge i c v ce
rjh60f5dpk preliminary r07ds0055ej0300 rev.3.00 page 7 of 7 nov 24, 2010 package dimensions 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 previous code prss000 4ze-a to-3p / to -3pv mass[typ.] 5.0g package name to-3p sc-65 renesas code jeita package code unit: mm ordering information orderable part number quan tity shipping container rjh60f5dpk-00-t0 360 pcs box (tube)
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", and "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended where you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "specific": aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 7f, no. 363 fu shing north road taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2010 renesas electronics corporation. all rights reserved. colophon 1.0
|
